Home / Single FETs, MOSFETs / FQI2N30TU

FQI2N30TU

Fairchild Semiconductor

Product No:

FQI2N30TU

Manufacturer:

Fairchild Semiconductor

Package:

I2PAK (TO-262)

Batch:

Datasheet:

Description:

MOSFET N-CH 300V 2.1A I2PAK

Quantity:

Delivery:

Payment:

In Stock : 7063

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

683

$0.418

$285.494

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for FQI2N30TU, please feel free to contact us. To facilitate the processing of your inquiry, kindly include FQI2N30TU and the required quantity in your RFQ. IICSEMI provides the latest quote for FQI2N30TU without requiring registration. Latest information on FQI2N30TU: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs FQI2N30TU latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	130 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	5 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	3.7Ohm @ 1.05A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	I2PAK (TO-262)
Drain to Source Voltage (Vdss)	300 V
Power Dissipation (Max)	3.13W (Ta), 40W (Tc)
Series	QFET®
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2.1A (Tc)
Mfr	Fairchild Semiconductor
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube