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FQI3N80TU

Fairchild Semiconductor

Product No:

FQI3N80TU

Manufacturer:

Fairchild Semiconductor

Package:

I2PAK (TO-262)

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Datasheet:

Description:

MOSFET N-CH 800V 3A I2PAK

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	690 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	19 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	5Ohm @ 1.5A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	I2PAK (TO-262)
Drain to Source Voltage (Vdss)	800 V
Power Dissipation (Max)	3.13W (Ta), 107W (Tc)
Series	QFET®
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Mfr	Fairchild Semiconductor
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube