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FQI4N90TU

Fairchild Semiconductor

Product No:

FQI4N90TU

Package:

I2PAK (TO-262)

Batch:

-

Datasheet:

-

Description:

POWER FIELD-EFFECT TRANSISTOR, 4

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 1502

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 254

    $1.121

    $284.734

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 3.3Ohm @ 2.1A, 10V
Product Status Active
Vgs(th) (Max) @ Id 5V @ 250µA
Supplier Device Package I2PAK (TO-262)
Drain to Source Voltage (Vdss) 900 V
Power Dissipation (Max) 3.13W (Ta), 140W (Tc)
Series QFET®
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 4.2A (Tc)
Mfr Fairchild Semiconductor
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk
Base Product Number FQI4N90

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