Home / Single FETs, MOSFETs / FQI7N80TU

FQI7N80TU

Fairchild Semiconductor

Product No:

FQI7N80TU

Manufacturer:

Fairchild Semiconductor

Package:

I2PAK (TO-262)

Batch:

Datasheet:

Description:

MOSFET N-CH 800V 6.6A I2PAK

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for FQI7N80TU, please feel free to contact us. To facilitate the processing of your inquiry, kindly include FQI7N80TU and the required quantity in your RFQ. IICSEMI provides the latest quote for FQI7N80TU without requiring registration. Latest information on FQI7N80TU: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs FQI7N80TU latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	52 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	1.5Ohm @ 3.3A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	I2PAK (TO-262)
Drain to Source Voltage (Vdss)	800 V
Power Dissipation (Max)	3.13W (Ta), 167W (Tc)
Series	QFET®
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	6.6A (Tc)
Mfr	Fairchild Semiconductor
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk