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FQP55N10

Fairchild Semiconductor

Product No:

FQP55N10

Manufacturer:

Fairchild Semiconductor

Package:

TO-220-3

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Datasheet:

Description:

POWER FIELD-EFFECT TRANSISTOR, 5

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Parameter Info

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2730 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	98 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	26mOhm @ 27.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-220-3
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	155W (Tc)
Series	QFET®
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	55A (Tc)
Mfr	Fairchild Semiconductor
Vgs (Max)	±25V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk