Home / Single FETs, MOSFETs / FQP6N60C

FQP6N60C

Fairchild Semiconductor

Product No:

FQP6N60C

Manufacturer:

Fairchild Semiconductor

Package:

TO-220-3

Batch:

Datasheet:

Description:

POWER FIELD-EFFECT TRANSISTOR, 5

Quantity:

Delivery:

Payment:

In Stock : 20356

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

353

$0.8075

$285.0475

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for FQP6N60C, please feel free to contact us. To facilitate the processing of your inquiry, kindly include FQP6N60C and the required quantity in your RFQ. IICSEMI provides the latest quote for FQP6N60C without requiring registration. Latest information on FQP6N60C: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs FQP6N60C latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	810 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	2Ohm @ 2.75A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-220-3
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	125W (Tc)
Series	QFET®
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	5.5A (Tc)
Mfr	Fairchild Semiconductor
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk