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FQP6N80

Fairchild Semiconductor

Product No:

FQP6N80

Package:

TO-220-3

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 800V 5.8A TO220-3

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 1.95Ohm @ 2.9A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 5V @ 250µA
Supplier Device Package TO-220-3
Drain to Source Voltage (Vdss) 800 V
Power Dissipation (Max) 158W (Tc)
Series QFET®
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 5.8A (Tc)
Mfr Fairchild Semiconductor
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube

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