Home / Single FETs, MOSFETs / FQP6N80

FQP6N80

Fairchild Semiconductor

Product No:

FQP6N80

Manufacturer:

Fairchild Semiconductor

Package:

TO-220-3

Batch:

Datasheet:

Description:

MOSFET N-CH 800V 5.8A TO220-3

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for FQP6N80, please feel free to contact us. To facilitate the processing of your inquiry, kindly include FQP6N80 and the required quantity in your RFQ. IICSEMI provides the latest quote for FQP6N80 without requiring registration. Latest information on FQP6N80: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs FQP6N80 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	31 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	1.95Ohm @ 2.9A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	TO-220-3
Drain to Source Voltage (Vdss)	800 V
Power Dissipation (Max)	158W (Tc)
Series	QFET®
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	5.8A (Tc)
Mfr	Fairchild Semiconductor
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube