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FQT4N25TF

Fairchild Semiconductor

Product No:

FQT4N25TF

Manufacturer:

Fairchild Semiconductor

Package:

SOT-223-4

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Datasheet:

Description:

POWER FIELD-EFFECT TRANSISTOR, 0

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	5.6 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.75Ohm @ 415mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	SOT-223-4
Drain to Source Voltage (Vdss)	250 V
Power Dissipation (Max)	2.5W (Tc)
Series	QFET®
Package / Case	TO-261-4, TO-261AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	830mA (Tc)
Mfr	Fairchild Semiconductor
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk