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FQU10N20CTU

Fairchild Semiconductor

Product No:

FQU10N20CTU

Manufacturer:

Fairchild Semiconductor

Package:

I-PAK

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Datasheet:

Description:

POWER FIELD-EFFECT TRANSISTOR, 7

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	26 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	360mOhm @ 3.9A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	I-PAK
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	50W (Tc)
Series	QFET®
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	7.8A (Tc)
Mfr	Fairchild Semiconductor
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk