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G3R160MT17J

GeneSiC Semiconductor

Product No:

G3R160MT17J

Manufacturer:

GeneSiC Semiconductor

Package:

TO-263-7

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Datasheet:

Description:

SIC MOSFET N-CH 22A TO263-7

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Parameter Info

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1272 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs	51 nC @ 15 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	208mOhm @ 12A, 15V
Product Status	Active
Vgs(th) (Max) @ Id	2.7V @ 5mA
Supplier Device Package	TO-263-7
Drain to Source Voltage (Vdss)	1700 V
Power Dissipation (Max)	187W (Tc)
Series	G3R™
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	22A (Tc)
Mfr	GeneSiC Semiconductor
Vgs (Max)	±15V
Drive Voltage (Max Rds On, Min Rds On)	15V
Package	Tube
Base Product Number	G3R160