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G3R350MT12J

GeneSiC Semiconductor

Product No:

G3R350MT12J

Manufacturer:

GeneSiC Semiconductor

Package:

TO-263-7

Batch:

Datasheet:

Description:

SIC MOSFET N-CH 11A TO263-7

Quantity:

Delivery:

Payment:

In Stock : 5712

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$5.2345

$5.2345
10

$4.6702

$46.702
25

$4.46234

$111.5585
100

$4.1648

$416.48
250

$3.97955

$994.8875
500

$3.844669

$1922.3345
1000

$3.713569

$3713.569
2500

$3.54825

$8870.625

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	334 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 15 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	420mOhm @ 4A, 15V
Product Status	Active
Vgs(th) (Max) @ Id	2.69V @ 2mA
Supplier Device Package	TO-263-7
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	75W (Tc)
Series	G3R™
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Mfr	GeneSiC Semiconductor
Vgs (Max)	±15V
Drive Voltage (Max Rds On, Min Rds On)	15V
Package	Tube
Base Product Number	G3R350