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G3S12010B

Global Power Technology-GPT

Product No:

G3S12010B

Package:

TO-247AB

Batch:

-

Datasheet:

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Description:

SIC SCHOTTKY DIODE 1200V 10A 3-P

Quantity:

Delivery:

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Payment:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Mounting Type Through Hole
Product Status Active
Supplier Device Package TO-247AB
Current - Reverse Leakage @ Vr 50 µA @ 1200 V
Series -
Package / Case TO-247-3
Technology SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 5 A
Diode Configuration 1 Pair Common Cathode
Mfr Global Power Technology-GPT
Voltage - DC Reverse (Vr) (Max) 1200 V
Package Cut Tape (CT)
Current - Average Rectified (Io) (per Diode) 39A (DC)
Operating Temperature - Junction -55°C ~ 175°C

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