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G3S12010BM

Global Power Technology-GPT

Product No:

G3S12010BM

Manufacturer:

Global Power Technology-GPT

Package:

TO-247AB

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Datasheet:

Description:

SIC SCHOTTKY DIODE 1200V 10A 3-P

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Product Information

Parameter Info

User Guide

Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Mounting Type	Through Hole
Product Status	Active
Supplier Device Package	TO-247AB
Current - Reverse Leakage @ Vr	50 µA @ 1200 V
Series	-
Package / Case	TO-247-3
Technology	SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 5 A
Diode Configuration	1 Pair Common Cathode
Mfr	Global Power Technology-GPT
Voltage - DC Reverse (Vr) (Max)	1200 V
Package	Cut Tape (CT)
Current - Average Rectified (Io) (per Diode)	19.8A (DC)
Operating Temperature - Junction	-55°C ~ 175°C