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GA04JT17-247

GeneSiC Semiconductor

Product No:

GA04JT17-247

Manufacturer:

GeneSiC Semiconductor

Package:

TO-247AB

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Datasheet:

Description:

TRANS SJT 1700V 4A TO247AB

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Product Information

Parameter Info

User Guide

Operating Temperature	175°C (TJ)
FET Feature	-
FET Type	-
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	480mOhm @ 4A
Product Status	Obsolete
Vgs(th) (Max) @ Id	-
Supplier Device Package	TO-247AB
Drain to Source Voltage (Vdss)	1700 V
Power Dissipation (Max)	106W (Tc)
Series	-
Package / Case	TO-247-3
Technology	SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C	4A (Tc) (95°C)
Mfr	GeneSiC Semiconductor
Vgs (Max)	-
Drive Voltage (Max Rds On, Min Rds On)	-
Package	Tube