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GA20JT12-263

GeneSiC Semiconductor

Product No:

GA20JT12-263

Manufacturer:

GeneSiC Semiconductor

Package:

TO-263-7

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Datasheet:

Description:

TRANS SJT 1200V 45A D2PAK

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Product Information

Parameter Info

User Guide

Operating Temperature	175°C (TJ)
FET Feature	-
FET Type	-
Input Capacitance (Ciss) (Max) @ Vds	3091 pF @ 800 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	60mOhm @ 20A
Product Status	Obsolete
Vgs(th) (Max) @ Id	-
Supplier Device Package	TO-263-7
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	282W (Tc)
Series	-
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology	SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C	45A (Tc)
Mfr	GeneSiC Semiconductor
Vgs (Max)	-
Drive Voltage (Max Rds On, Min Rds On)	-
Package	Tube
Base Product Number	GA20JT12