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GAN190-650FBEZ

Nexperia USA Inc.

Product No:

GAN190-650FBEZ

Manufacturer:

Nexperia USA Inc.

Package:

DFN5060-5

Batch:

Datasheet:

Description:

650 V, 190 MOHM GALLIUM NITRIDE

Quantity:

Delivery:

Payment:

In Stock : 2055

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$4.066

$4.066
10

$3.4162

$34.162
100

$2.76336

$276.336
500

$2.45632

$1228.16
1000

$2.103224

$2103.224

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	96 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	2.8 nC @ 6 V
Mounting Type	Surface Mount, Wettable Flank
Rds On (Max) @ Id, Vgs	190mOhm @ 3.9A, 6V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 12.2mA
Supplier Device Package	DFN5060-5
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	125W (Ta)
Series	-
Package / Case	8-PowerVDFN
Technology	GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C	11.5A (Ta)
Mfr	Nexperia USA Inc.
Vgs (Max)	+7V, -1.4V
Drive Voltage (Max Rds On, Min Rds On)	6V
Package	Tape & Reel (TR)
Base Product Number	GAN190