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GB01SLT12-220

GeneSiC Semiconductor

Product No:

GB01SLT12-220

Manufacturer:

GeneSiC Semiconductor

Package:

TO-220-2

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Description:

DIODE SIL CARB 1.2KV 1A TO220-2

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Product Information

Parameter Info

User Guide

Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Capacitance @ Vr, F	69pF @ 1V, 1MHz
Mounting Type	Through Hole
Product Status	Obsolete
Supplier Device Package	TO-220-2
Current - Reverse Leakage @ Vr	2 µA @ 1200 V
Series	-
Package / Case	TO-220-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If	1.8 V @ 1 A
Mfr	GeneSiC Semiconductor
Voltage - DC Reverse (Vr) (Max)	1200 V
Package	Bulk
Current - Average Rectified (Io)	1A
Operating Temperature - Junction	-55°C ~ 175°C
Base Product Number	GB01SLT12