Home / Bipolar Transistor Arrays / HN1B01FU-Y(L,F,T)

HN1B01FU-Y(L,F,T)

Toshiba Semiconductor and Storage

Product No:

HN1B01FU-Y(L,F,T)

Manufacturer:

Toshiba Semiconductor and Storage

Package:

US6

Batch:

Datasheet:

Description:

TRANS NPN/PNP 50V 0.15A US6

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for HN1B01FU-Y(L,F,T), please feel free to contact us. To facilitate the processing of your inquiry, kindly include HN1B01FU-Y(L,F,T) and the required quantity in your RFQ. IICSEMI provides the latest quote for HN1B01FU-Y(L,F,T) without requiring registration. Latest information on HN1B01FU-Y(L,F,T): #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs HN1B01FU-Y(L,F,T) latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	125°C (TJ)
Frequency - Transition	120MHz
Current - Collector (Ic) (Max)	150mA
Vce Saturation (Max) @ Ib, Ic	300mV @ 10mA, 100mA
Mounting Type	Surface Mount
Product Status	Active
Voltage - Collector Emitter Breakdown (Max)	50V
Supplier Device Package	US6
Series	-
Transistor Type	NPN, PNP
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max	200mW
Mfr	Toshiba Semiconductor and Storage
Current - Collector Cutoff (Max)	100nA (ICBO)
Package	Tape & Reel (TR)
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 2mA, 6V
Base Product Number	HN1B01