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HS1JL R3G

Taiwan Semiconductor Corporation

Product No:

HS1JL R3G

Manufacturer:

Taiwan Semiconductor Corporation

Package:

Sub SMA

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Datasheet:

Description:

DIODE GEN PURP 600V 1A SUB SMA

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Product Information

Parameter Info

User Guide

Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	75 ns
Capacitance @ Vr, F	15pF @ 4V, 1MHz
Mounting Type	Surface Mount
Product Status	Active
Supplier Device Package	Sub SMA
Current - Reverse Leakage @ Vr	5 µA @ 600 V
Series	-
Package / Case	DO-219AB
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 1 A
Mfr	Taiwan Semiconductor Corporation
Voltage - DC Reverse (Vr) (Max)	600 V
Package	Tape & Reel (TR)
Current - Average Rectified (Io)	1A
Operating Temperature - Junction	-55°C ~ 150°C
Base Product Number	HS1J