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HT8KE6TB1

Rohm Semiconductor

Product No:

HT8KE6TB1

Manufacturer:

Rohm Semiconductor

Package:

8-HSMT (3.2x3)

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Datasheet:

Description:

100V 13A, DUAL NCH+NCH, HSMT8, P

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	Standard
Configuration	2 N-Channel
Input Capacitance (Ciss) (Max) @ Vds	305pF @ 50V
Gate Charge (Qg) (Max) @ Vgs	6.7nC @ 10V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	57mOhm @ 4.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 1mA
Supplier Device Package	8-HSMT (3.2x3)
Drain to Source Voltage (Vdss)	100V
Series	-
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Power - Max	2W (Ta), 14W (Tc)
Current - Continuous Drain (Id) @ 25°C	4.5A (Ta), 13A (Tc)
Mfr	Rohm Semiconductor
Package	Tape & Reel (TR)