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HUF75309P3

Harris Corporation

Product No:

HUF75309P3

Manufacturer:

Harris Corporation

Package:

TO-220-3

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Datasheet:

Description:

MOSFET N-CH 55V 19A TO220-3

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 20 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	70mOhm @ 19A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-220-3
Drain to Source Voltage (Vdss)	55 V
Power Dissipation (Max)	55W (Tc)
Series	UltraFET™
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	19A (Tc)
Mfr	Harris Corporation
Vgs (Max)	±20V
Package	Tube