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HUF76609D3

Fairchild Semiconductor

Product No:

HUF76609D3

Package:

I-PAK

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 100V 10A IPAK

Quantity:

Delivery:

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Payment:

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In Stock : 15455

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 701

    $0.4085

    $286.3585

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 425 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 160mOhm @ 10A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package I-PAK
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 49W (Tc)
Series UltraFET™
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Mfr Fairchild Semiconductor
Vgs (Max) ±16V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tube

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