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IAUS300N04S4N007ATMA1

Infineon Technologies

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Infineon Technologies

Package:

PG-HSOG-8-1

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Description:

MOSFET_(20V 40V) PG-HSOG-8

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	27356 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	342 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	740mOhm @ 100A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 275µA
Supplier Device Package	PG-HSOG-8-1
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	375W (Tc)
Series	OptiMOS™
Package / Case	8-PowerSFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	300A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)