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IAUT165N08S5N029ATMA1

Infineon Technologies

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Infineon Technologies

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PG-HSOF-8-1

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Description:

MOSFET N-CH 80V 165A 8HSOF

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	6370 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs	90 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2.9mOhm @ 80A, 10V
Product Status	Not For New Designs
Vgs(th) (Max) @ Id	3.8V @ 108µA
Supplier Device Package	PG-HSOF-8-1
Drain to Source Voltage (Vdss)	80 V
Power Dissipation (Max)	167W (Tc)
Series	OptiMOS™-5
Package / Case	8-PowerSFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	165A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	IAUT165