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IGLD60R190D1AUMA3

Infineon Technologies

Product No:

IGLD60R190D1AUMA3

Manufacturer:

Infineon Technologies

Package:

PG-LSON-8-1

Batch:

Datasheet:

Description:

GAN HV

Quantity:

Delivery:

Payment:

In Stock : 2905

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$7.144

$7.144
10

$6.12085

$61.2085
100

$5.100645

$510.0645
500

$4.50053

$2250.265
1000

$4.050477

$4050.477

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	157 pF @ 400 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	-
Product Status	Active
Vgs(th) (Max) @ Id	1.6V @ 960µA
Supplier Device Package	PG-LSON-8-1
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	62.5W (Tc)
Series	CoolGaN™
Package / Case	8-LDFN Exposed Pad
Technology	GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	-10V
Drive Voltage (Max Rds On, Min Rds On)	-
Package	Tape & Reel (TR)