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IGT60R070D1ATMA4

Infineon Technologies

Product No:

IGT60R070D1ATMA4

Manufacturer:

Infineon Technologies

Package:

PG-HSOF-8-3

Batch:

Datasheet:

Description:

GANFET N-CH

Quantity:

Delivery:

Payment:

In Stock : 1934

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$13.5755

$13.5755
10

$11.9624

$119.624
100

$10.34569

$1034.569
500

$9.375797

$4687.8985
1000

$8.599875

$8599.875

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	380 pF @ 400 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	-
Product Status	Active
Vgs(th) (Max) @ Id	1.6V @ 2.6mA
Supplier Device Package	PG-HSOF-8-3
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	125W (Tc)
Series	CoolGaN™
Package / Case	8-PowerSFN
Technology	GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C	31A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	-10V
Drive Voltage (Max Rds On, Min Rds On)	-
Package	Tape & Reel (TR)