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IGT60R190D1SATMA1

Infineon Technologies

Product No:

IGT60R190D1SATMA1

Manufacturer:

Infineon Technologies

Package:

PG-HSOF-8-3

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Datasheet:

Description:

GANFET N-CH 600V 12.5A 8HSOF

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	157 pF @ 400 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	-
Product Status	Obsolete
Vgs(th) (Max) @ Id	1.6V @ 960µA
Supplier Device Package	PG-HSOF-8-3
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	55.5W (Tc)
Series	CoolGaN™
Package / Case	8-PowerSFN
Technology	GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C	12.5A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	-10V
Drive Voltage (Max Rds On, Min Rds On)	-
Package	Tape & Reel (TR)
Base Product Number	IGT60R190