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IMBG120R090M1HXTMA1

Infineon Technologies

Product No:

IMBG120R090M1HXTMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-7-12

Batch:

-

Datasheet:

-

Description:

SICFET N-CH 1.2KV 26A TO263

Quantity:

Delivery:

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In Stock : 2768

Minimum: 1 Multiples: 1

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Unit Price

Ext Price

  • 1

    $11.894

    $11.894

  • 10

    $10.47945

    $104.7945

  • 100

    $9.063665

    $906.3665

  • 500

    $8.213947

    $4106.9735

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature Standard
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 763 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 18 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 125mOhm @ 8.5A, 18V
Product Status Active
Vgs(th) (Max) @ Id 5.7V @ 3.7mA
Supplier Device Package PG-TO263-7-12
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 136W (Tc)
Series CoolSiC™
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 26A (Tc)
Mfr Infineon Technologies
Vgs (Max) +18V, -15V
Package Tape & Reel (TR)
Base Product Number IMBG120

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