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IMW120R045M1XKSA1

Infineon Technologies

Product No:

IMW120R045M1XKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO247-3-41

Batch:

-

Datasheet:

-

Description:

SICFET N-CH 1.2KV 52A TO247-3

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 140

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $19.4655

    $19.4655

  • 10

    $17.1494

    $171.494

  • 100

    $14.831685

    $1483.1685

  • 500

    $13.441246

    $6720.623

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs 52 nC @ 15 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 59mOhm @ 20A, 15V
Product Status Not For New Designs
Vgs(th) (Max) @ Id 5.7V @ 10mA
Supplier Device Package PG-TO247-3-41
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 228W (Tc)
Series CoolSiC™
Package / Case TO-247-3
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 52A (Tc)
Mfr Infineon Technologies
Vgs (Max) +20V, -10V
Drive Voltage (Max Rds On, Min Rds On) 15V
Package Tube
Base Product Number IMW120

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