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IMW120R350M1HXKSA1

Infineon Technologies

Product No:

IMW120R350M1HXKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO247-3-41

Batch:

Datasheet:

Description:

SICFET N-CH 1.2KV 4.7A TO247-3

Quantity:

Delivery:

Payment:

In Stock : 1401

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$7.98

$7.98
10

$6.83715

$68.3715
100

$5.697625

$569.7625
500

$5.027305

$2513.6525
1000

$4.524574

$4524.574
2000

$4.239688

$8479.376

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	182 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs	5.3 nC @ 18 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	455mOhm @ 2A, 18V
Product Status	Active
Vgs(th) (Max) @ Id	5.7V @ 1mA
Supplier Device Package	PG-TO247-3-41
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	60W (Tc)
Series	CoolSiC™
Package / Case	TO-247-3
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	4.7A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	+23V, -7V
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Package	Tube
Base Product Number	IMW120