Home / Single FETs, MOSFETs / IMZA120R020M1HXKSA1

IMZA120R020M1HXKSA1

Infineon Technologies

Product No:

IMZA120R020M1HXKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO247-4-8

Batch:

Datasheet:

Description:

SIC DISCRETE

Quantity:

Delivery:

Payment:

In Stock : 208

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$34.485

$34.485
10

$30.64605

$306.4605
100

$26.804345

$2680.4345

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for IMZA120R020M1HXKSA1, please feel free to contact us. To facilitate the processing of your inquiry, kindly include IMZA120R020M1HXKSA1 and the required quantity in your RFQ. IICSEMI provides the latest quote for IMZA120R020M1HXKSA1 without requiring registration. Latest information on IMZA120R020M1HXKSA1: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs IMZA120R020M1HXKSA1 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3460 nF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	83 nC @ 18 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	26.9mOhm @ 41A, 18V
Product Status	Active
Vgs(th) (Max) @ Id	5.2V @ 17.6mA
Supplier Device Package	PG-TO247-4-8
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	375W (Tc)
Series	CoolSiC™
Package / Case	TO-247-4
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	98A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	+20V, -5V
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Package	Tube