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IPA50R650CE

Infineon Technologies

Product No:

IPA50R650CE

Manufacturer:

Infineon Technologies

Package:

PG-TO220-FP

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Datasheet:

Description:

MOSFET N-CH 500V 6.1A TO220-FP

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Product Information

Parameter Info

User Guide

Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	342 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	650mOhm @ 1.8A, 13V
Product Status	Obsolete
Vgs(th) (Max) @ Id	3.5V @ 150µA
Supplier Device Package	PG-TO220-FP
Drain to Source Voltage (Vdss)	500 V
Power Dissipation (Max)	27.2W (Tc)
Series	CoolMOS™
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	6.1A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	13V
Package	Tube
Base Product Number	IPA50R