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IPAW60R360P7SXKSA1

Infineon Technologies

Product No:

IPAW60R360P7SXKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO220 Full Pack

Batch:

Datasheet:

Description:

MOSFET N-CH 650V 9A TO220

Quantity:

Delivery:

Payment:

In Stock : 181

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.3395

$1.3395
10

$1.09345

$10.9345
100

$0.850535

$85.0535
500

$0.720917

$360.4585
1000

$0.587262

$587.262
2000

$0.552834

$1105.668
5000

$0.526509

$2632.545
10000

$0.502208

$5022.08

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Product Information

Parameter Info

User Guide

Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	555 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	13 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	360mOhm @ 2.7A, 10V
Product Status	Not For New Designs
Vgs(th) (Max) @ Id	4V @ 140µA
Supplier Device Package	PG-TO220 Full Pack
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	22W (Tc)
Series	CoolMOS™ P7
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	9A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IPAW60