Home / Single FETs, MOSFETs / IPB023N04NG

IPB023N04NG

Infineon Technologies

Product No:

IPB023N04NG

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3-2

Batch:

Datasheet:

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for IPB023N04NG, please feel free to contact us. To facilitate the processing of your inquiry, kindly include IPB023N04NG and the required quantity in your RFQ. IICSEMI provides the latest quote for IPB023N04NG without requiring registration. Latest information on IPB023N04NG: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs IPB023N04NG latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	10000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs	120 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2.3mOhm @ 90A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 95µA
Supplier Device Package	PG-TO263-3-2
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	167W (Tc)
Series	OptiMOS™3
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	90A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk