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IPB030N08N3GATMA1

Infineon Technologies

Product No:

IPB030N08N3GATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-7

Batch:

Datasheet:

Description:

MOSFET N-CH 80V 160A TO263-7

Quantity:

Delivery:

Payment:

In Stock : 2752

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$3.819

$3.819
10

$3.4257

$34.257
100

$2.80668

$280.668
500

$2.389307

$1194.6535

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	8110 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs	117 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	3mOhm @ 100A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 155µA
Supplier Device Package	PG-TO263-7
Drain to Source Voltage (Vdss)	80 V
Power Dissipation (Max)	214W (Tc)
Series	OptiMOS™
Package / Case	TO-263-7, D²Pak (6 Leads + Tab)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	160A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	IPB030