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IPB034N06N3G

Infineon Technologies

Product No:

IPB034N06N3G

Manufacturer:

Infineon Technologies

Package:

PG-TO263-7-3

Batch:

Datasheet:

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

Payment:

In Stock : 3146

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

315

$0.9025

$284.2875

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	11000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	130 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	3.4mOhm @ 100A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 93µA
Supplier Device Package	PG-TO263-7-3
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	167W (Tc)
Series	OptiMOS™ 3
Package / Case	TO-263-7, D²Pak (6 Leads + Tab)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk