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IPB039N10N3GE8197ATMA1

Infineon Technologies

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Infineon Technologies

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PG-TO263-7-3

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Description:

N-CHANNEL POWER MOSFET

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	8410 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	117 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	3.9mOhm @ 100A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 160µA
Supplier Device Package	PG-TO263-7-3
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	214W (Tc)
Series	OptiMOS™ 3
Package / Case	TO-263-7, D²Pak (6 Leads + Tab)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	160A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Bulk