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IPB19DP10NMATMA1

Infineon Technologies

Product No:

IPB19DP10NMATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

Batch:

Datasheet:

Description:

TRENCH >=100V PG-TO263-3

Quantity:

Delivery:

Payment:

In Stock : 1000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$2.052

$2.052
10

$1.70145

$17.0145
100

$1.353845

$135.3845
500

$1.145586

$572.793

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	2000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	185mOhm @ 12A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1.04mA
Supplier Device Package	PG-TO263-3
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	3.8W (Ta), 83W (Tc)
Series	OptiMOS™
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2.9A (Ta), 13.8A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	IPB19D