Infineon Technologies
Product No:
IPB65R090CFD7ATMA1
Manufacturer:
Package:
PG-TO263-3
Batch:
-
Datasheet:
-
Description:
HIGH POWER_NEW
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$5.8235
$5.8235
10
$4.9932
$49.932
100
$4.160905
$416.0905
500
$3.671389
$1835.6945
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Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | - |
FET Type | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 2513 pF @ 400 V |
Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 90mOhm @ 12.5A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 4.5V @ 630µA |
Supplier Device Package | PG-TO263-3 |
Drain to Source Voltage (Vdss) | 650 V |
Power Dissipation (Max) | 127W (Tc) |
Series | CoolMOS™ CFD7 |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Package | Tape & Reel (TR) |
Base Product Number | IPB65R |