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IPBE65R230CFD7AATMA1

Infineon Technologies

Product No:

IPBE65R230CFD7AATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-7-3-10

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 650V 11A TO263-7

Quantity:

Delivery:

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Payment:

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In Stock : 2451

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $4.9115

    $4.9115

  • 10

    $4.123

    $41.23

  • 100

    $3.335355

    $333.5355

  • 500

    $2.964779

    $1482.3895

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Product Information

Parameter Info

User Guide

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1044 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 230mOhm @ 5.2A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 260µA
Supplier Device Package PG-TO263-7-3-10
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 63W (Tc)
Series Automotive, AEC-Q101, CoolMOS™ CFD7A
Package / Case TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPBE65

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