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IPC50N04S55R8ATMA1

Infineon Technologies

Product No:

IPC50N04S55R8ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TDSON-8-33

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 40V 50A 8TDSON-33

Quantity:

Delivery:

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Payment:

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In Stock : 9995

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.912

    $0.912

  • 10

    $0.74575

    $7.4575

  • 100

    $0.58026

    $58.026

  • 500

    $0.491872

    $245.936

  • 1000

    $0.400691

    $400.691

  • 2000

    $0.377198

    $754.396

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1090 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 5.8mOhm @ 25A, 10V
Product Status Not For New Designs
Vgs(th) (Max) @ Id 3.4V @ 13µA
Supplier Device Package PG-TDSON-8-33
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 42W (Tc)
Series OptiMOS™
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
Package Tape & Reel (TR)
Base Product Number IPC50N

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