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IPD048N06L3GATMA1

Infineon Technologies

Product No:

IPD048N06L3GATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3-311

Batch:

Datasheet:

Description:

MOSFET N-CH 60V 90A TO252-3

Quantity:

Delivery:

Payment:

In Stock : 2044

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.235

$1.235
10

$1.0089

$10.089
100

$0.784605

$78.4605
500

$0.665057

$332.5285
1000

$0.541766

$541.766

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	8400 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	50 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	4.8mOhm @ 90A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.2V @ 58µA
Supplier Device Package	PG-TO252-3-311
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	115W (Tc)
Series	OptiMOS™
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	90A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	IPD048N