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IPD18DP10LMATMA1

Infineon Technologies

Product No:

IPD18DP10LMATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3

Batch:

-

Datasheet:

-

Description:

TRENCH >=100V PG-TO252-3

Quantity:

Delivery:

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Payment:

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In Stock : 2174

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.4155

    $1.4155

  • 10

    $1.15615

    $11.5615

  • 100

    $0.89946

    $89.946

  • 500

    $0.762413

    $381.2065

  • 1000

    $0.621062

    $621.062

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 2100 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 178mOhm @ 13A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2V @ 1.04mA
Supplier Device Package PG-TO252-3
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 3W (Ta), 83W (Tc)
Series OptiMOS™
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta), 13.9A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number IPD18D

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