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IPD30N03S4L14ATMA1

Infineon Technologies

Product No:

IPD30N03S4L14ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3-11

Batch:

Datasheet:

Description:

MOSFET N-CH 30V 30A TO252-3

Quantity:

Delivery:

Payment:

In Stock : 1649

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.95

$0.95
10

$0.85025

$8.5025
100

$0.66291

$66.291
500

$0.547637

$273.8185
1000

$0.432354

$432.354

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	980 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	13.6mOhm @ 30A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.2V @ 10µA
Supplier Device Package	PG-TO252-3-11
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	31W (Tc)
Series	OptiMOS™
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±16V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	IPD30N03