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IPD35N10S3L26ATMA1

Infineon Technologies

Product No:

IPD35N10S3L26ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3-11

Batch:

Datasheet:

Description:

MOSFET N-CH 100V 35A TO252-31

Quantity:

Delivery:

Payment:

In Stock : 19760

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.5295

$1.5295
10

$1.36515

$13.6515
100

$1.06457

$106.457
500

$0.879434

$439.717
1000

$0.694298

$694.298

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	24mOhm @ 35A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.4V @ 39µA
Supplier Device Package	PG-TO252-3-11
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	71W (Tc)
Series	OptiMOS™
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	IPD35N10