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IPD50R1K4CEAUMA1

Infineon Technologies

Product No:

IPD50R1K4CEAUMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 500V 3.1A TO252-3

Quantity:

Delivery:

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Payment:

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In Stock : 4940

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.5605

    $0.5605

  • 10

    $0.4959

    $4.959

  • 100

    $0.379905

    $37.9905

  • 500

    $0.300314

    $150.157

  • 1000

    $0.240255

    $240.255

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 178 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 8.2 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.4Ohm @ 900mA, 13V
Product Status Not For New Designs
Vgs(th) (Max) @ Id 3.5V @ 70µA
Supplier Device Package PG-TO252-3
Drain to Source Voltage (Vdss) 500 V
Power Dissipation (Max) 42W (Tc)
Series CoolMOS™ CE
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 3.1A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 13V
Package Tape & Reel (TR)
Base Product Number IPD50R1

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