Home / Single FETs, MOSFETs / IPD50R950CEAUMA1

IPD50R950CEAUMA1

Infineon Technologies

Product No:

IPD50R950CEAUMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3-344

Batch:

Datasheet:

Description:

CONSUMER

Quantity:

Delivery:

Payment:

In Stock : 4825

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.6365

$0.6365
10

$0.5548

$5.548
100

$0.384085

$38.4085
500

$0.32091

$160.455
1000

$0.273116

$273.116

Not the price you want? Send RFQ Now and we'll contact you ASAP.

GOOD,as a globally renowned distributor of electronic components, sells a wide range of electronic components from the world's top brand manufacturers, ensuring that all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications, configurations, prices, supply cycles and payment terms of IPD50R950CEAUMA1, please feel free to contact us at any time. To facilitate the processing of your inquiry, please include IPD50R950CEAUMA1 and the required quantity in the RFQ. GOOD can get the latest quotations of IPD50R950CEAUMA1 without registration. IPD50R950CEAUMA1 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	231 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	10.5 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	950mOhm @ 1.2A, 13V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 100µA
Supplier Device Package	PG-TO252-3-344
Drain to Source Voltage (Vdss)	500 V
Power Dissipation (Max)	53W (Tc)
Series	CoolMOS™ CE
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4.3A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	13V
Package	Tape & Reel (TR)
Base Product Number	IPD50R950