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IPD60R600E6

Infineon Technologies

Product No:

IPD60R600E6

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3

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Datasheet:

Description:

MOSFET N-CH 600V 7.3A TO252-3

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	20.5 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	600mOhm @ 2.4A, 10V
Product Status	Discontinued at Digi-Key
Vgs(th) (Max) @ Id	3.5V @ 200µA
Supplier Device Package	PG-TO252-3
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	63W (Tc)
Series	CoolMOS™ E6
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	7.3A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	IPD60R