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IPD65R225C7ATMA1

Infineon Technologies

Product No:

IPD65R225C7ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 650V 11A TO252-3

Quantity:

Delivery:

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Payment:

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In Stock : 9698

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.546

    $2.546

  • 10

    $2.2838

    $22.838

  • 100

    $1.871405

    $187.1405

  • 500

    $1.593093

    $796.5465

  • 1000

    $1.343566

    $1343.566

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 996 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 225mOhm @ 4.8A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 240µA
Supplier Device Package PG-TO252-3
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 63W (Tc)
Series CoolMOS™ C7
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPD65R225

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