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IPD65R660CFDATMA2

Infineon Technologies

Product No:

IPD65R660CFDATMA2

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3-313

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 700V 6A TO252-3-313

Quantity:

Delivery:

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Payment:

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In Stock : 2179

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.634

    $1.634

  • 10

    $1.3585

    $13.585

  • 100

    $1.08148

    $108.148

  • 500

    $0.915078

    $457.539

  • 1000

    $0.776426

    $776.426

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 615 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 660mOhm @ 2.1A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 200µA
Supplier Device Package PG-TO252-3-313
Drain to Source Voltage (Vdss) 700 V
Power Dissipation (Max) 63W (Tc)
Series CoolMOS™ CFD2
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPD65R660

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